Growth and properties of highly orientated Sr0.75Ba0.25Nb2O6 thin films on silicon substrates with MgO or TiN buffer layers

Sr0.75Ba0.25Nb2O6 (SBN75) thin films were deposited on silicon substrate with MgO (100) or TiN (100) buffer layer by radio-frequency magnetron sputtering technique. X-ray diffraction confirmed that a 900 degree C annealed SBN self-buffer layer introduced before SBN deposition can lead to the highly...

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Bibliographic Details
Published in:Thin solid films 2011-07, Vol.519 (19), p.6403-6407
Main Authors: YIN, Y, FU, X. H, YE, H
Format: Article
Language:English
Subjects:
Buffer layers
Composition and phase identification
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition
Deposition by sputtering
Dispersions
Exact sciences and technology
Magnesium oxide
Magnetron sputtering
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Silicon substrates
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Theory and models of film growth
Thin film structure and morphology
Thin films
Titanium nitride
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Summary:Sr0.75Ba0.25Nb2O6 (SBN75) thin films were deposited on silicon substrate with MgO (100) or TiN (100) buffer layer by radio-frequency magnetron sputtering technique. X-ray diffraction confirmed that a 900 degree C annealed SBN self-buffer layer introduced before SBN deposition can lead to the highly c-axis orientation of SBN75 thin film on MgO buffer layer. Energy-dispersive spectrometry analysis showed that the SBN75 films had target-film composition transfer and the TiN buffer layer was partially oxidized during SBN growth. The refractive index of SBN films on both MgO/Si and TiN/Si substrates was determined by fitting the measured reflectance curves with Sellmeier dispersion model in the visible region and the micro-structures were studied by scanning electron microscopy. In this paper, the conditions for SBN/MgO/Si treated as waveguide structure were also discussed.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.04.114