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An 800-MHz embedded DRAM with a concurrent refresh mode
An 800-MHz embedded DRAM macro employs a memory cell utilizing a device from the 90-nm high-performance technology menu; a 2.2-nm gate oxide 1.5 V IO device. A concurrent refresh mode is designed to improve the memory utilization to over 99% for a 64 /spl mu/s data retention time. A concurrent refre...
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Published in: | IEEE journal of solid-state circuits 2005-06, Vol.40 (6), p.1377-1387 |
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Main Authors: | , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | An 800-MHz embedded DRAM macro employs a memory cell utilizing a device from the 90-nm high-performance technology menu; a 2.2-nm gate oxide 1.5 V IO device. A concurrent refresh mode is designed to improve the memory utilization to over 99% for a 64 /spl mu/s data retention time. A concurrent refresh scheduler utilizes up-count and down-count registers to identify at least one array to be refreshed at every clock cycle, emulating a classical distributed refresh mode. A command multiplier employs low frequency phased clock signals to generate the clock, commands, and addresses at rates up to 4/spl times/ that of the tester frequency. The macro integrates masked redundancy allocation logic during at speed multibank test. The hardware results show a 312-MHz random access frequency and 800-MHz multibank frequency at 1.2 V, respectively. |
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ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2005.848019 |