A 2-D analytical solution for SCEs in DG MOSFETs

A two-dimensional (2-D) analytical solution of electrostatic potential is derived for undoped (or lightly doped) double-gate (DG) MOSFETs in the subthreshold region by solving Poissons equation in a 2-D boundary value problem. It is shown that the subthreshold current, short-channel threshold voltag...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-09, Vol.51 (9), p.1385-1391
Main Authors: Liang, X., Taur, Y.
Format: Article
Language:English
Subjects:
Applied sciences
Asymmetry
Boundary value problems
Computer simulation
Electronics
Electrostatic analysis
Exact sciences and technology
Fittings
Mathematical analysis
Mathematical models
MOSFETs
Poisson equation
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A two-dimensional (2-D) analytical solution of electrostatic potential is derived for undoped (or lightly doped) double-gate (DG) MOSFETs in the subthreshold region by solving Poissons equation in a 2-D boundary value problem. It is shown that the subthreshold current, short-channel threshold voltage rolloff and subthreshold slope predicted by the analytical solution are in close agreement with 2-D numerical simulation results for both symmetric and asymmetric DG MOSFETs without the need of any fitting parameters. The analytical model not only provides useful physics insight into short-channel effects, but also serves as basis for compact modeling of DG MOSFETs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.832707