Influence of CuO and B2O3 on sintering and dielectric properties of tungsten bronze type microwave ceramics: a case study in Ba4Nd9.3Ti18O54

• Published in: Journal of materials science. Materials in electronics 2011, Vol.22 (2), p.106-110
• Main Authors: Wu, Yang, Zuo, Ruzhong, Zhang, Jinjin, Zhou, Yuanyuan, Yue, Zhenxing
• Format: Article
• Language: English
• Subjects: Ceramics; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Density; Dielectric properties; Dielectric properties of solids and liquids; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Materials Science; Microstructure; Microwaves; Optical and Electronic Materials; Physics; Sintering; Sintering aids; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Tungsten bronze
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-010-0095-x

The effect of CuO and B 2 O 3 co-doping on the sintering behavior, microstructure and microwave dielectric properties of tungsten bronze type Ba 4 Nd 9.3 Ti 18 O 54 (BNT) ceramics has been investigated by means of a traditional solid-state mixed oxide route. On the one hand, it was indicated that the mixture of CuO and B 2 O 3 is an effective sintering aid for BNT matrix compositions owing to the existence of a low-temperature eutectic reaction. On the other hand, it was found that the addition of CuO and B 2 O 3 has an obvious effect on microwave dielectric properties of BNT ceramics, depending on the amount of sintering aids, the sample density and microstructure. The liquid phases from sintering aids can promote densification, but simultaneously induce grain growth which tends to decrease the sintering driving force. BNT ceramics doped with 3 wt% CuO–B 2 O 3 mixture can be well sintered at 950°C for 4 h and still exhibit relatively good microwave dielectric properties.