HfSiON n-MOSFETs Using Low-Work Function Gate

The authors have developed a novel high-temperature stable HfSi sub(x) gate for high-kappa HfSiON gate dielectric. After a 1000 degC RTA, the HfSi sub(x)/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm super(2)/Vmiddots at 1.6-nm equivalent oxide th...

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Bibliographic Details
Published in:IEEE electron device letters 2006-09, Vol.27 (9), p.762
Main Authors: Wu, C.H, Hung, B.F, Chin, A, Wang, S.J, Yen, F.Y, Hou, Y.T, Jin, Y, Tao, H.J, Chen, S.C, Liang, M.S
Format: Article
Language:English
Subjects:
Compatibility
Devices
Dielectrics
Electron mobility
Equivalence
Gates
Oxides
Work functions
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Summary:The authors have developed a novel high-temperature stable HfSi sub(x) gate for high-kappa HfSiON gate dielectric. After a 1000 degC RTA, the HfSi sub(x)/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm super(2)/Vmiddots at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.880659