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Using Floating Gate and Quasi-Floating Gate Techniques for Rail-to-Rail Tunable CMOS Transconductor Design
Floating-gate and quasi-floating gate MOS transistors can be efficiently employed to design CMOS transconductors. These transistors allow achievement of relevant features in a compact and simple way, such as rail-to-rail input range, continuous transconductance tuning, and class AB operation. This p...
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Published in: | IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2011-07, Vol.58 (7), p.1604-1614 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Floating-gate and quasi-floating gate MOS transistors can be efficiently employed to design CMOS transconductors. These transistors allow achievement of relevant features in a compact and simple way, such as rail-to-rail input range, continuous transconductance tuning, and class AB operation. This paper illustrates how these techniques can be applied by employing them in the design of two transconductors, which have been fabricated in a 0.5 μm CMOS process. Measurement results confirm the advantages of the proposed approach. |
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ISSN: | 1549-8328 1558-0806 |
DOI: | 10.1109/TCSI.2011.2157782 |