Test structure design considerations for RF-CV measurements on leaky dielectrics

We present an MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extr...

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Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 2004-05, Vol.17 (2), p.150-154
Main Authors: Schmitz, J., Cubaynes, F.N., Havens, R.J., de Kort, R., Scholten, A.J., Tiemeijer, L.F.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance measurement
Capacitance-voltage characteristics
Compound structure devices
Current measurement
Density
Density measurement
Design methodology
Design. Technologies. Operation analysis. Testing
Dielectric measurements
Dielectrics
Electronics
Exact sciences and technology
Integrated circuits
Inversions
Leakage current
Metal oxide semiconductors
Methodology
Radio frequencies
Radio frequency
Robustness
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Testing
Testing, measurement, noise and reliability
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Description
Summary:We present an MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2004.826998