Nonlinear effects in T-branch junctions

The negative potential appearing at the central branch of T-branch junctions (TBJs) when biasing left and right contacts in push-pull fashion has been found to appear under high biasing not only for short (ballistic) TBJs but also for long (diffusive) ones. By means of a microscopic Monte Carlo simu...

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Bibliographic Details
Published in:IEEE electron device letters 2004-05, Vol.25 (5), p.235-237
Main Authors: Mateos, J., Vasallo, B.G., Pardo, D., Gonzalez, T., Pichonat, E., Galloo, J.-S., Bollaert, S., Roelens, Y., Cappy, A.
Format: Article
Language:English
Subjects:
Ballistic transport
Computer simulation
Devices
Diffusion
Electron microscopy
Electronics
Emergence
Fabrication
Molecular beam epitaxial growth
Monte Carlo methods
Nanoscale devices
Nonlinearity
Scanning electron microscopy
Scattering
Semiconductor process modeling
Temperature
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Summary:The negative potential appearing at the central branch of T-branch junctions (TBJs) when biasing left and right contacts in push-pull fashion has been found to appear under high biasing not only for short (ballistic) TBJs but also for long (diffusive) ones. By means of a microscopic Monte Carlo simulation we are able to explain this nonlinear effect as a consequence of intervalley scattering mechanisms leading to the emergence of an accumulation domain that modifies the electronic potential profile within the devices.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.826571