Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to re...

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Bibliographic Details
Published in:IEEE electron device letters 2004-05, Vol.25 (5), p.238-240
Main Authors: Hampson, M.D., Shyh-Chiang Shen, Schwindt, R.S., Price, R.K., Chowdhury, U., Wong, M.M., Ting Gang Zhu, Dongwon Yoo, Dupuis, R.D., Milton Feng
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Chemicals
Degradation
Density
Devices
Dispersions
FETs
HEMTs
Heterojunctions
MODFETs
Passivation
Polyimide resins
Polyimides
Power measurements
Radio frequencies
Radio frequency
Threading dislocations
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Summary:Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to reduce the number of surface states and minimize RF dispersion. Continuous-wave power measurements were taken at 18 GHz on two-finger 0.23-μm devices with 2×75 μm total gate width before and after passivation yielding an increase from 2.14 W/mm to 4.02 W/mm in power density, and 12.5% to 24.47% in power added efficiency. Additionally, a 2×25 μm device yielded a peak power density of 7.65 W/mm at 18 GHz. This data suggests that polyimide can be an effective passivation film for reducing surface states.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.826565