Nitrogen incorporated GeTe phase change thin film for high-temperature data retention and low-power application

The crystallization temperature of GeTe film increases markedly from 187 to 372 °C as a result of 9.81 at.% nitrogen doping, and a rhombohedral–rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 10 5 cycles of endurance for phase change memory (PCM) cells...

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Bibliographic Details
Published in:Scripta materialia 2011-08, Vol.65 (4), p.327-330
Main Authors: Peng, Cheng, Wu, Liangcai, Rao, Feng, Song, Zhitang, Zhou, Xilin, Zhu, Min, Liu, Bo, Yao, Dongning, Feng, Songlin, Yang, Pingxiong, Chu, Junhao
Format: Article
Language:English
Subjects:
Crystallization
Data retention
Doping
Durability
Endurance
GeTeN film
Phase change
Phase change memory
Phase transformations
Power consumption
Thin films
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Summary:The crystallization temperature of GeTe film increases markedly from 187 to 372 °C as a result of 9.81 at.% nitrogen doping, and a rhombohedral–rocksalt phase transition is observed in both GeTe and nitrogen-doped GeTe (GeTeN) films. Up to 10 5 cycles of endurance for phase change memory (PCM) cells based on GeTeN have been achieved. Extrafine data retention (10 years at 241 °C) and relatively low power consumption suggest GeTeN as a promising alternative material to improve the performance of PCM.
ISSN:1359-6462
1872-8456
DOI:10.1016/j.scriptamat.2011.04.033