The effects of stress, temperature, and spin flips on polarization switching in vertical-cavity surface-emitting lasers

We discuss the effect of uniaxial planar stress on polarization switching in vertical-cavity surface-emitting lasers (VCSELs). The approach is based on an explicit form of a frequency-dependent complex susceptibility of the uniaxially stressed quantum-well semiconductor material. In this mesoscopic...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2006-09, Vol.42 (9), p.898-906
Main Authors: Van der Sande, G., Peeters, M., Veretennicoff, I., Danckaert, J., Verschaffelt, G., Balle, S.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Frequency
Fundamental areas of phenomenology (including applications)
Gain
Holes
Laser modes
Lasers
Numerical analysis
optical polarization
Optics
Physics
Polarization
quantum theory
Quantum well lasers
Quantum wells
Semiconductor lasers
Semiconductor lasers
laser diodes
Semiconductor materials
stress
Stresses
Surface emitting lasers
Switching
Temperature
Thermal stresses
Vertical cavity surface emission lasers
Vertical cavity surface emitting lasers
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Summary:We discuss the effect of uniaxial planar stress on polarization switching in vertical-cavity surface-emitting lasers (VCSELs). The approach is based on an explicit form of a frequency-dependent complex susceptibility of the uniaxially stressed quantum-well semiconductor material. In this mesoscopic framework, we have taken cavity anisotropies, spin carrier dynamics, and thermal shift of the gain curve into account. In this way, we present a model that provides a global overview of the polarization switching phenomenon. The results are compared with experiments on an air-post VCSEL operating at 980 nm
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2006.879816