High microwave and noise performance of 0.17-μm AlGaN-GaN HEMTs on high-resistivity silicon substrates

AlGaN-GaN high-electron mobility transistors (HEMTs) based on high-resistivity silicon substrate with a 0.17-μm T-shape gate length are fabricated. The device exhibits a high drain current density of 550 mA/mm at V/sub GS/=1 V and V/sub DS/=10 V with an intrinsic transconductance (g/sub m/) of 215 m...

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Bibliographic Details
Published in:IEEE electron device letters 2004-04, Vol.25 (4), p.167-169
Main Authors: Minko, A., Hoel, V., Lepilliet, S., Dambrine, G., De Jaeger, J.C., Cordier, Y., Semond, F., Natali, F., Massies, J.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Current density
Current measurement
Cutoff frequency
Devices
Drains
Frequency measurement
HEMTs
High electron mobility transistors
Microwave devices
Microwaves
MODFETs
Noise
Noise levels
Semiconductor devices
Silicon
Silicon substrates
Transconductance
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Summary:AlGaN-GaN high-electron mobility transistors (HEMTs) based on high-resistivity silicon substrate with a 0.17-μm T-shape gate length are fabricated. The device exhibits a high drain current density of 550 mA/mm at V/sub GS/=1 V and V/sub DS/=10 V with an intrinsic transconductance (g/sub m/) of 215 mS/mm. A unity current gain cutoff frequency (f T ) of 46 GHz and a maximum oscillation frequency (f max ) of 92 GHz are measured at V/sub DS/=10 V and I/sub DS/=171 mA/mm. The radio-frequency microwave noise performance of the device is obtained at 10 GHz for different drain currents. At V/sub DS/=10 V and I/sub DS/=92 mA/mm, the device exhibits a minimum-noise figure (NF min ) of 1.1 dB and an associated gain (G/sub ass/) of 12 dB. To our knowledge, these results are the best f T , f max and microwave noise performance ever reported on GaN HEMT grown on Silicon substrate.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.825208