A very low-power CMOS mixed-signal IC for implantable pacemaker applications

Low power consumption is crucial for medical implant devices. A single-chip, very-low-power interface IC used in implantable pacemaker systems is presented. It contains amplifiers, filters, ADCs, battery management system, voltage multipliers, high voltage pulse generators, programmable logic and ti...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2004-12, Vol.39 (12), p.2446-2456
Main Authors: Wong, L.S.Y., Hossain, S., Ta, A., Edvinsson, J., Rivas, D.H., Naas, H.
Format: Article
Language:English
Subjects:
Analog-digital conversion
Application specific integrated circuits
Applied sciences
Battery management systems
biomedical equipment
Circuit properties
Circuits
CMOS
CMOS integrated circuits
CMOS logic circuits
digital-analog conversion
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Energy consumption
Exact sciences and technology
Filters
high voltage
implantable biomedical devices
Implants
Integrated circuits
Integrated circuits by function (including memories and processors)
leakage cancellation
low power
Nanostructure
Pacemakers
Pulse amplifiers
Pulse generation
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal convertors
sub-threshold
Surgical implants
switched-capacitor circuits
switched-capacitor filters
Transistors
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Description
Summary:Low power consumption is crucial for medical implant devices. A single-chip, very-low-power interface IC used in implantable pacemaker systems is presented. It contains amplifiers, filters, ADCs, battery management system, voltage multipliers, high voltage pulse generators, programmable logic and timing control. A few circuit techniques are proposed to achieve nanopower circuit operations within submicron CMOS process. Subthreshold transistor designs and switched-capacitor circuits are widely used. The 200 k transistor IC occupies 49 mm/sup 2/, is fabricated in a 0.5-/spl mu/m two-poly three-metal multi-V/sub t/ process, and consumes 8 /spl mu/W.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2004.837027