Synthesis and characterization of low-dielectric photosensitive polyimide/silica hybrid materials

Photosensitive polyimide/silica hybrid materials were synthesized by reaction between 4,4′-hexafluoroisopropylidene diphthalic anhydride (6FDA) and 4,4′-oxydianiline. The intrachain chemical bonding and the interchain hydrogen bonding between the polyimide and silica moieties were increased by the i...

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Bibliographic Details
Published in:Journal of applied polymer science 2010-08, Vol.117 (4), p.2422-2427
Main Authors: Srisuwan, Suttisak, Thongyai, Supakanok, Praserthdam, Piyasan
Format: Article
Language:English
Subjects:
Applied sciences
Composites
Coupling agents
Dielectric constant
Exact sciences and technology
Forms of application and semi-finished materials
Hydrogen bonding
low-dielectric polyimide
Oxides
Photolithography
photosensitive polyimide
Polyimide resins
polyimide-silica hybrid
Polymer industry, paints, wood
Shrinkage
Silicon dioxide
Technology of polymers
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Summary:Photosensitive polyimide/silica hybrid materials were synthesized by reaction between 4,4′-hexafluoroisopropylidene diphthalic anhydride (6FDA) and 4,4′-oxydianiline. The intrachain chemical bonding and the interchain hydrogen bonding between the polyimide and silica moieties were increased by the incorporation of 2-(dimethylamino) ethyl acrylate and 3-aminopropyl trimetho xysilane, respectively. The photoinitiator was bis(2,4,6-trimethyl benzoyl) phenylphosphine oxide (Irgacure-819). The various coupling agents were utilized included tetrakis (allyloxy) silane (TAL). Most silica hybrid films showed better volume shrinkage and temperature resistance. The cooperation of octavinyl POSS, as the coupling agent, can lower dielectric constant (k) down to 2.48 but with the poorer volume shrinkage and temperature resistance than the other silica hybrid films. The addition of tetramethyl orthosilicate and 3-methacryloxy propyltrimethoxysilane with silica content of 5.6 wt % can reduce k down to 2.26 but with worse volume shrinkage than the incorporation with TAL. The TAL hybrid film with degree of polymerization of 25 showed the best properties that optimized photolithography, dielectric constant (k = 3.81), volume shrinkage, and temperature resistance (Td5% = 378°C) with only 0.22 wt % silica content.
ISSN:0021-8995
1097-4628
1097-4628
DOI:10.1002/app.32187