Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation

For the first time, we demonstrated photostable and dynamic rectification in ZnO nanowire (NW) Schottky diode circuits where two diodes are face-to-face connected in the same ZnO wire. With their properties improved by H-doping from atomic layer deposited Al2O3 passivation, our ZnO NW diode circuits...

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Bibliographic Details
Published in:Nano letters 2011-10, Vol.11 (10), p.4246-4250
Main Authors: Ryu, Boram, Lee, Young Tack, Lee, Kwang H, Ha, Ryong, Park, Ji Hoon, Choi, Heon-Jin, Im, Seongil
Format: Article
Language:English
Subjects:
Applied sciences
Circuits
Cross-disciplinary physics: materials science
rheology
Diodes
Dynamics
Electronics
Exact sciences and technology
Interfaces
Materials science
Molecular electronics, nanoelectronics
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanowires
Passivation
Physics
Quantum wires
Rectification
Schottky diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Wire
Zinc oxide
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Summary:For the first time, we demonstrated photostable and dynamic rectification in ZnO nanowire (NW) Schottky diode circuits where two diodes are face-to-face connected in the same ZnO wire. With their properties improved by H-doping from atomic layer deposited Al2O3 passivation, our ZnO NW diode circuits stably operated at a maximum frequency of 100 Hz displaying a good rectification even under the lights. We thus conclude that our results promisingly appoached one-dimensional nanoelectronics.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl202239c