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Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation
For the first time, we demonstrated photostable and dynamic rectification in ZnO nanowire (NW) Schottky diode circuits where two diodes are face-to-face connected in the same ZnO wire. With their properties improved by H-doping from atomic layer deposited Al2O3 passivation, our ZnO NW diode circuits...
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Published in: | Nano letters 2011-10, Vol.11 (10), p.4246-4250 |
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container_end_page | 4250 |
container_issue | 10 |
container_start_page | 4246 |
container_title | Nano letters |
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creator | Ryu, Boram Lee, Young Tack Lee, Kwang H Ha, Ryong Park, Ji Hoon Choi, Heon-Jin Im, Seongil |
description | For the first time, we demonstrated photostable and dynamic rectification in ZnO nanowire (NW) Schottky diode circuits where two diodes are face-to-face connected in the same ZnO wire. With their properties improved by H-doping from atomic layer deposited Al2O3 passivation, our ZnO NW diode circuits stably operated at a maximum frequency of 100 Hz displaying a good rectification even under the lights. We thus conclude that our results promisingly appoached one-dimensional nanoelectronics. |
doi_str_mv | 10.1021/nl202239c |
format | article |
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With their properties improved by H-doping from atomic layer deposited Al2O3 passivation, our ZnO NW diode circuits stably operated at a maximum frequency of 100 Hz displaying a good rectification even under the lights. 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We thus conclude that our results promisingly appoached one-dimensional nanoelectronics.</description><subject>Applied sciences</subject><subject>Circuits</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Diodes</subject><subject>Dynamics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Interfaces</subject><subject>Materials science</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanowires</subject><subject>Passivation</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Rectification</subject><subject>Schottky diodes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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With their properties improved by H-doping from atomic layer deposited Al2O3 passivation, our ZnO NW diode circuits stably operated at a maximum frequency of 100 Hz displaying a good rectification even under the lights. We thus conclude that our results promisingly appoached one-dimensional nanoelectronics.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>21875124</pmid><doi>10.1021/nl202239c</doi><tpages>5</tpages></addata></record> |
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subjects | Applied sciences Circuits Cross-disciplinary physics: materials science rheology Diodes Dynamics Electronics Exact sciences and technology Interfaces Materials science Molecular electronics, nanoelectronics Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanowires Passivation Physics Quantum wires Rectification Schottky diodes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Wire Zinc oxide |
title | Photostable Dynamic Rectification of One-Dimensional Schottky Diode Circuits with a ZnO Nanowire Doped by H during Passivation |
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