Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

• Published in: ACS nano 2011-10, Vol.5 (10), p.7707-7712
• Main Authors: Ghatak, Subhamoy, Pal, Atindra Nath, Ghosh, Arindam
• Format: Article
• Language: English
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/nn202852j

We present low-temperature electrical transport experiments in five field-effect transistor devices consisting of monolayer, bilayer, and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to room temperature over the experimentally accessible range of gate voltage. This manifests in two-dimensional (2D) variable range hopping (VRH) at high temperatures, while below ∼30 K, the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T 0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate is the dominant source of disorder in MoS2 field-effect devices, which leads to carrier localization, as well.