Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires

We present the homoepitaxial growth of p-type, magnesium doped gallium nitride shells by use of halide vapor phase epitaxy (HVPE) on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy (MBE). Scanning electron microscopy shows clear dopant contrast between the core and s...

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Bibliographic Details
Published in:Nanotechnology 2011-11, Vol.22 (46), p.465703-1-7
Main Authors: Sanders, Aric, Blanchard, Paul, Bertness, Kris, Brubaker, Matthew, Dodson, Christopher, Harvey, Todd, Herrero, Andrew, Rourke, Devin, Schlager, John, Sanford, Norman, Chiaramonti, Ann N, Davydov, Albert, Motayed, Abhishek, Tsvetkov, Denis
Format: Article
Language:English
Subjects:
Diffraction
Lattice parameters
Magnesium
Molecular beam epitaxy
Nanowires
Nitrides
Shells
Vapor phase epitaxy
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Summary:We present the homoepitaxial growth of p-type, magnesium doped gallium nitride shells by use of halide vapor phase epitaxy (HVPE) on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy (MBE). Scanning electron microscopy shows clear dopant contrast between the core and shell of the nanowire. The growth of magnesium doped nanowire shells shows little or no effect on the lattice parameters of the underlying nanowires, as measured by x-ray diffraction (XRD). Photoluminescence measurements of the nanowires show the appearance of sub-bandgap features in the blue and the ultraviolet, indicating the presence of acceptors. Finally, electrical measurements confirm the presence of electrically active holes in the nanowires.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/22/46/465703