Reliability of advanced high-k/metal-gate n-FET devices

Hot-carrier degradation and bias-temperature instability of FinFET and fully-depleted SOI devices with high-k gate dielectrics and metal gates are investigated. Thinner SOI results in increased hot-carrier degradation, which can be recovered by junction engineering. FinFETs with (1 1 0) Si active su...

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Bibliographic Details
Published in:Microelectronics and reliability 2010-09, Vol.50 (9), p.1199-1202
Main Authors: Stathis, J.H., Wang, M., Zhao, K.
Format: Article
Language:English
Subjects:
Applied sciences
Degradation
Devices
Electronics
Exact sciences and technology
Gates
Instability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solvents
Stability
Stresses
Surface chemistry
Transistors
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Summary:Hot-carrier degradation and bias-temperature instability of FinFET and fully-depleted SOI devices with high-k gate dielectrics and metal gates are investigated. Thinner SOI results in increased hot-carrier degradation, which can be recovered by junction engineering. FinFETs with (1 1 0) Si active surfaces exhibit degradation of sub-threshold swing after hot carrier stress, indicating generation of interface states. The effect of duty cycle on bias-temperature instability modulates the quasi-steady-state trap occupancy over a broad distribution of electron trapping and de-trapping times. Only the deeper traps remain filled for low duty cycle, and shallower traps are emptied during AC stress.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2010.07.017