Comparative study of ZnO thin films prepared by plasma deposition and electron beam evaporation for use in photovoltaic devices

Undoped zinc oxide thin films were grown at room temperature using two techniques: plasma deposition (PD) and electron beam evaporation in an argon atmosphere. PD offers some advantages, such as low ion damage and low deposition temperature. The optical transmittance of the films deposited by both m...

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Bibliographic Details
Published in:Progress in photovoltaics 2011-03, Vol.19 (2), p.149-154
Main Authors: Falcão, V. D., Miranda, D. O., Sabino, M. E. L., Moura, T. D. O., Diniz, A. S. A. C, Cruz, L. R., Branco, J. R. T.
Format: Article
Language:English
Subjects:
Applied sciences
Deposition
Direct energy conversion and energy accumulation
Electrical engineering. Electrical power engineering
Electrical power engineering
Electron beams
Energy
Evaporation
Exact sciences and technology
Natural energy
Photoelectric conversion
Photovoltaic cells
Photovoltaic conversion
photovoltaic devices
Plasma deposition
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Thin films
transparent conductive oxide
Zinc oxide
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Summary:Undoped zinc oxide thin films were grown at room temperature using two techniques: plasma deposition (PD) and electron beam evaporation in an argon atmosphere. PD offers some advantages, such as low ion damage and low deposition temperature. The optical transmittance of the films deposited by both methods was higher than 80% in the near UV–VIS range; the energy band gap and index of refraction agree with values reported in the literature. The resistivity of films grown by PD was 3.1 × 10−2 Ω cm, lower than the value of 1.2 × 10−1 Ω cm found for plasma assisted e‐beam evaporated films. Copyright © 2010 John Wiley & Sons, Ltd. Undoped ZnO thin films were grown at room temperature using two techniques: plasma deposition and electron beam evaporation in an argon atmosphere. The optical transmittance of the films deposited by both methods was higher than 80% in the near UV‐VIS range; the energy band gap and index of refraction agree with values reported in the literature. The resistivity of films grown by plasma deposition was 3.1 × 10−2Ω.cm, lower than the value of 1.2 × 10−1Ω.cm found for plasma assisted e‐beam evaporated films.
ISSN:1062-7995
1099-159X
1099-159X
DOI:10.1002/pip.999