Programmable nano-switch array using SiN/GaAs interface traps on a GaAs nanowire network for reconfigurable BDD logic circuits

Programmable nano-switch arrays on GaAs-based nanowire networks are investigated for a reconfigurable binary-decision-diagram (BDD) logic circuit. A programmable switch was simply realized by inserting a SiNx thin layer between a metal gate and a nanowire. Fabricated switches were characterized in t...

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Bibliographic Details
Published in:Microelectronic engineering 2011-08, Vol.88 (8), p.2755-2758
Main Authors: Shiratori, Yuta, Miura, Kensuke, Kasai, Seiya
Format: Article
Language:English
Subjects:
Applied sciences
Arrays
Binary-decision-diagram
Circuit properties
Cross-disciplinary physics: materials science
rheology
Digital circuits
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
GaAs nanowire network
Gallium arsenide
Gates (circuits)
Materials science
Nanocomposites
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanowires
Networks
Physics
Programmable switch
Quantum wires
Reconfigurable circuit
Switches
Switching, multiplexing, switched capacity circuits
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Summary:Programmable nano-switch arrays on GaAs-based nanowire networks are investigated for a reconfigurable binary-decision-diagram (BDD) logic circuit. A programmable switch was simply realized by inserting a SiNx thin layer between a metal gate and a nanowire. Fabricated switches were characterized in terms of hysteresis curve, program time dependences of off-state retention time, and on-state current. HCl treatment on SiNx prior to metal gate formation was found to remarkably improve the switching characteristics. We experimentally demonstrated correct and stable operation of a four-input reconfigurable BDD circuit integrating the switch array with HCl treatment.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2010.12.007