High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC

High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with excellent performance and high yield. The devices had 0.14 μm T-gates with a total width of 300 μm. Extrinsic, unpassivated peak performance values for these HEMTs include transconductanc...

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Bibliographic Details
Published in:IEEE electron device letters 2003-11, Vol.24 (11), p.677-679
Main Authors: Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Cutoff frequency
Devices
Drains
Fabrication
Gallium nitride
Gallium nitrides
HEMTs
High electron mobility transistors
Laboratories
MODFETs
Ohmic contacts
Semiconductor devices
Silicon carbide
Temperature
Unity
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Summary:High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with excellent performance and high yield. The devices had 0.14 μm T-gates with a total width of 300 μm. Extrinsic, unpassivated peak performance values for these HEMTs include transconductance of 338 mS/mm, maximum drain current of 1481 mA/mm, unity current gain cutoff frequency of 91 GHz, and maximum frequency of oscillation of 122 GHz. Saturated CW power measurements of these devices at 10 GHz result in 4.6 W/mm with PAE at 46% when optimized for power and 3.0 W/mm with PAE at 65% when optimized for efficiency.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.818816