Active NEMS combining a single crystal silicon mechanical structure and an embedded MOSFET transistor for sensing and RF applications

The paper reports on an integrated device combining a single-crystal silicon NEMS with an embedded MOS transistor in transconductance configuration fabricated with a simple and low cost technology based on localized Silicon on Nothing technology. Thanks to the high transconductance achievable, this...

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Bibliographic Details
Published in:Microelectronic engineering 2011-08, Vol.88 (8), p.2364-2367
Main Authors: Ollier, E., Berthelot, A., Duraffourg, L., Colinet, E., Arcamone, J., Renaux, P., Renaud, D., Robert, P., Casset, F., Ancey, P.
Format: Article
Language:English
Subjects:
Applied sciences
CMOS
Condensed matter: structure, mechanical and thermal properties
Electronics
Exact sciences and technology
General (including economical and industrial fields)
Integration
Metal oxide semiconductors
Micro- and nanoelectromechanical devices (mems/nems)
MOSFETs
Nanoelectromechanical systems
NEMS
Physics
Resonator
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
SiGe
Silicon
Single crystals
SON
Structure of solids and liquids
crystallography
Structure of specific crystalline solids
Transconductance
Transistors
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Summary:The paper reports on an integrated device combining a single-crystal silicon NEMS with an embedded MOS transistor in transconductance configuration fabricated with a simple and low cost technology based on localized Silicon on Nothing technology. Thanks to the high transconductance achievable, this approach enables NEMS with embedded MOS transistors for enhanced readout efficiency.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2010.11.027