1.3-μm range GaInNAsSb-GaAs VCSELs

• Published in: IEEE journal of selected topics in quantum electronics 2003-09, Vol.9 (5), p.1214-1219
• Main Authors: Shimizu, H., Setiagung, C., Ariga, M., Ikenaga, Y., Kumada, K., Hama, T., Ueda, N., Iwai, N., Kasukawa, A.
• Format: Article
• Language: English
• Subjects: Arrays; Bragg reflectors; Density; Molecular beam epitaxy; Reflectivity; Threshold currents; Threshold voltage; Vertical cavity surface emission lasers
• ISSN: 1077-260X
• DOI: 10.1109/JSTQE.2003.819505

1.3- mu m-range GaInNAsSb vertical-cavity surface-emitting lasers (VCSELs) with the doped mirror were investigated. GaInNASb active layers that include a small amount of Sb can be easily grown in a two-dimensional manner as compared with GaInNAs due to the suppression of the formation of three-dimensional growth in MBE growth. The authors obtained the lowest J sub(th) per well (150 A/cm super(2)/well) for the edge-emission type lasers due to the high quality of GaInNAsSb quantum wells. Using this material for the active media, the authors accomplished the first continuous wave operation of 1.3- mu m-range GaInNAsSb VCSELs. For the reduction of the threshold voltage and the differential resistance, they used the doped mirror grown by metal-organic chemical vapor deposition (MOCVD). By three-step growth, they obtained 1.3- mu m GaInNAs-based VCSELs with the low threshold current density (3.6 kA/cm super(2)), the low threshold voltage (1.2 V), and the low differential resistance (60 Omega ) simultaneously for the first time. The back-to-back transmission was carried out up to 5 Gb/s. Further, the uniform operation of 10-ch VCSEL array was demonstrated. The maximum output power of 1 mW was obtained at 20 degree C by changing the reflectivity of the front distributed Bragg reflector mirror. GaInNAsSb VCSELs were demonstrated to be very promising material for realizing the 1.3- mu m signal light sources, and the usage of the doped mirror grown by MOCVD is the best way for 1.3- mu m VCSELs.