UV-nanoimprinting using non-transparent molds and non-transparent substrates

A new ultraviolet assisted nanoimprint lithography technique with an exposure through non-transparent molds and a nm-resolution capability is reported. The UV imprint material was not cured by direct irradiation, but substantially exposed to indirect and diffuse irradiation. The nanoimprint molds co...

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Bibliographic Details
Published in:Microelectronic engineering 2011-08, Vol.88 (8), p.2004-2008
Main Authors: Kirchner, R., Finn, A., Teng, L., Ploetner, M., Jahn, A., Nueske, L., Fischer, W.-J.
Format: Article
Language:English
Subjects:
Antisticking layer
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Electronics
Exact sciences and technology
Foils
Irradiation
Lithography
Materials science
Methods of nanofabrication
Microelectronic fabrication (materials and surfaces technology)
Molds
Nanocomposites
Nanocrystalline materials
Nanolithography
Nanomaterials
Nanoscale pattern formation
Nanostructure
Non-transparent mold
NT-UV-NIL
Opaque mold
Physics
Radiation effects on specific materials
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon substrates
Structure of solids and liquids
crystallography
UV nanoimprint
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Summary:A new ultraviolet assisted nanoimprint lithography technique with an exposure through non-transparent molds and a nm-resolution capability is reported. The UV imprint material was not cured by direct irradiation, but substantially exposed to indirect and diffuse irradiation. The nanoimprint molds consisted of a transparent support and a non-transparent, patterned element. Successful imprints were conducted on transparent glass and polymer foils placed on non-transparent substrate holders as well as on SiO2 on Si. The reported technique enables the application of non-transparent mold materials like Si, new mold materials and alternative antisticking layers like metals in UV-NIL.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2011.01.066