Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization

The growth mechanism of metal-induced-lateral-crystallization (MILC) was studied and modeled. Based on the time evolution of the metal impurity in the amorphous silicon film being crystallized, a model has been developed to predict the growth rate and the final metal distribution in the crystallized...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2003-06, Vol.50 (6), p.1467-1474
Main Authors: Cheng, C.F., Poon, V.M.C., Kok, C.W., Chan, M.
Format: Article
Language:English
Subjects:
Annealing
Crystallization
Evolution
Grain boundaries
Grain growth
Grain size
Impurities
Mathematical models
Nickel compounds
Semiconductor films
Semiconductor process modeling
Silicon
Thin film transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The growth mechanism of metal-induced-lateral-crystallization (MILC) was studied and modeled. Based on the time evolution of the metal impurity in the amorphous silicon film being crystallized, a model has been developed to predict the growth rate and the final metal distribution in the crystallized polysilicon. The model prediction has been compared with experimental results and high prediction accuracy is demonstrated. Using the model, the effects of annealing temperature, annealing time and initial metal concentration on the final grain size and metal impurity distribution can be analyzed. As a result, the model can be used to optimize the grain growth conditions for fabricating high performance thin-film-transistors on the recrystallized polysilicon film.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.813521