A gain-controllable wide-band low-noise amplifier in low-cost 0.8- mu m Si BiCMOS technology

A low-noise amplifier (LNA) implemented in a low-cost Si-BiCMOS 0.8- mu m process is presented. It utilizes current conveyors as building blocks. The principle and design methodology are presented, followed by results obtained from simulations. A brief technology and measurement technique descriptio...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2004-01, Vol.52 (1)
Main Authors: Seguin, F, Godara, B, Alicalapa, F, Fabre, A
Format: Article
Language:English
Subjects:
Amplifiers
Attenuators
Circuits
Communication systems
Direct current
Gain
Microwaves
Noise levels
Online Access:Get full text
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Summary:A low-noise amplifier (LNA) implemented in a low-cost Si-BiCMOS 0.8- mu m process is presented. It utilizes current conveyors as building blocks. The principle and design methodology are presented, followed by results obtained from simulations. A brief technology and measurement technique description is then made, leading up to the measurement results obtained. The performance is compared with some other LNA realizations. The potentialities of the LNA are finally touched upon, with particular regard to future communications systems. The gain of the LNA is controllable, in the range of 0-20 dB, by varying the dc bias current. Negative decibel gains can also be obtained, making it an attenuator circuit. Using a +/-1.5 V supply, and at a measured gain of 14 dB, the LNA has measured -3 dB bandwidth of dc to 1.9 GHz,
ISSN:0018-9480
DOI:10.1109/TMTT.2003.821265