Design and realization of high-power ripple-free superluminescent diodes at 1300 nm

To realize high-power superluminescent diodes (SLDs) emitting at the 1300-nm wavelength and to see how different structure parameters influence the device performances, three different epitaxial layers have been studied. It was found that the structure employing a graded-refractive-index separate-co...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of quantum electronics 2004-09, Vol.40 (9), p.1270-1274
Main Authors: Fu, L., Schweizer, H., Yanshen Zhang, Lan Li, Baechle, A.M., Jochum, S., Bernatz, G.C., Hansmann, S.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitive sensors
Devices
Electronics
Emittance
Epitaxial layers
Exact sciences and technology
Gyroscopes
Optical coupling
Optical fiber devices
Optoelectronic devices
Power generation
Quantum electronics
Quantum well devices
Quantum wells
Ripples
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor optical amplifiers
Superluminescent diodes
Wavelength division multiplexing
Wavelengths
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:To realize high-power superluminescent diodes (SLDs) emitting at the 1300-nm wavelength and to see how different structure parameters influence the device performances, three different epitaxial layers have been studied. It was found that the structure employing a graded-refractive-index separate-confinement heterostructure, with linearly graded p-doped cap layer and with eight quantum wells, is most suitable for high-power SLDs. With a proper design of a geometrical structure for SLDs, the obtained output power at 20/spl deg/C is about 25 mW under CW operation and 100 mW at 1.1 A under pulsed operation with no observable ripple.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2004.830178