Program schemes for multilevel flash memories

This paper presents a synthetic overview of multilevel (ML) flash memory program methods. The problem of increasing program time with the number of bits stored in each cell is discussed and methods based on both channel hot electrons (CHE) and Fowler-Nordheim tunneling (FNT) are discussed. In the ca...

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Bibliographic Details
Published in:Proceedings of the IEEE 2003-04, Vol.91 (4), p.594-601
Main Authors: Grossi, M., Lanzoni, M., Ricco, B.
Format: Article
Language:English
Subjects:
Channel hot electron injection
Channels
Character generation
Costs
Degradation
Electric potential
Flash memory
Flash memory (computers)
Gates
Hot electrons
Multilevel
Parallel processing
Programming
Threshold voltage
Throughput
Tunneling
Voltage
Voltage control
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Summary:This paper presents a synthetic overview of multilevel (ML) flash memory program methods. The problem of increasing program time with the number of bits stored in each cell is discussed and methods based on both channel hot electrons (CHE) and Fowler-Nordheim tunneling (FNT) are discussed. In the case of CHE, the use of an increasing voltage rather than a constant one on the control gate (CG) leads to narrower threshold voltage distributions and smaller current absorption, with positive effects on the degree of parallelism and program throughput. As for FNT, much faster programming than that commonly used today can be done using high CG voltages without producing intolerable degradation of cell reliability.
ISSN:0018-9219
1558-2256
DOI:10.1109/JPROC.2003.811714