High-performance poly-silicon TFTs incorporating LaAlO sub(3) as the gate dielectric

We have integrated a high- Kappa LaAlO sub(3) dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectr...

Full description

Saved in:
Bibliographic Details
Published in:IEEE electron device letters 2005-01, Vol.26 (6)
Main Authors: Hung, B F, Chiang, K C, Huang, C C, Chin, A, McAlister, S P
Format: Article
Language:English
Subjects:
Breakdown
Crystallization
Density
Dielectrics
Equivalence
Gates
Semiconductor devices
Thin film transistors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have integrated a high- Kappa LaAlO sub(3) dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high- Kappa dielectric.
ISSN:0741-3106
DOI:10.1109/LED.2005.848622