Synthesis and analysis of silicon nanowire below Si–Au eutectic temperatures using very high frequency plasma enhanced chemical vapor deposition

• Published in: Applied surface science 2011-08, Vol.257 (21), p.9188-9192
• Main Authors: Hamidinezhad, Habib, Wahab, Yussof, Othaman, Zulkafli, Ismail, Abd Khamim
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Eutectic temperature; Exact sciences and technology; Gold; Nanomaterials; Nanostructure; Nanowires; Physics; Scanning electron microscopy; Silicon nanowire; Silicon substrates; Very high frequencies; VHF-PECVD; VSS; X-rays
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2011.05.130

► Gold colloid and SiH 4 were used as catalytic and precursor gas, respectively, to grow silicon nanowires using the very high frequency plasma enhanced chemical vapor deposition (VHFPECVD) technique. ► The SiNWs have grown at below Au–Si eutectic temperature (as low as 250 °C). ► SiNWs were grown via vapor–solid–solid (VSS) mechanism. ► SiNWs have a crystalline Si core and amorphous sheath. Silicon nanowires (SiNWs) were synthesized from pure silane precursor gas and Au nanoparticles catalyst at below Au–Si eutectic temperature. The SiNWs were grown onto Si (1 1 1) substrates using very high frequency plasma enhanced chemical vapor deposition via a vapor–solid–solid mechanism at temperatures ranging from 363 to 230 °C. The morphology of the synthesized SiNWs was characterized by means of field emission scanning electron microscope equipped with energy dispersive X-ray, high resolution transmission electron microscopy, X-ray diffraction technique and Raman spectroscope. Results demonstrated that the SiNWs can be grown at the temperature as low as 250 °C. In addition, it was revealed that the grown wires were silicon-crystallized.