Proton nonionizing energy loss (NIEL) for device applications

The proton-induced nonionizing energy loss (NIEL) for representative device materials are presented for the energy range between the displacement damage threshold to 1 GeV. All interaction mechanisms (Coulomb and nuclear elastic/nonelastic) are fully accounted for in the present NIEL calculations. F...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2003-12, Vol.50 (6), p.1924-1928
Main Authors: Insoo Jun, Xapsos, M.A., Messenger, S.R., Burke, E.A., Walters, R.J., Summers, G.P., Jordan, T.
Format: Article
Language:English
Subjects:
Atomic layer deposition
Coulomb friction
Devices
Displacement
Energy (nuclear)
Energy loss
Energy of formation
Energy use
Gallium arsenide
Laboratories
Mathematical analysis
NASA
Optical sensors
Propulsion
Protons
Semiconductor devices
Space technology
Transport
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Summary:The proton-induced nonionizing energy loss (NIEL) for representative device materials are presented for the energy range between the displacement damage threshold to 1 GeV. All interaction mechanisms (Coulomb and nuclear elastic/nonelastic) are fully accounted for in the present NIEL calculations. For Coulomb interactions, the Ziegler-Biersack-Littmark (ZBL) screened potential was used in the lower energy range (
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2003.820760