Transient photovoltage and photoluminescence study of exciton dissociation at indium tin oxide/pentacene interface

• Published in: Science China. Physics, mechanics & astronomy mechanics & astronomy, 2011-06, Vol.54 (6), p.1112-1115
• Main Authors: Zheng, XiaoYan, Wu, Bo, Sun, XiaoYu, Ding, XunMin, Hou, XiaoYuan
• Format: Article
• Language: English
• Subjects: Astronomy; Buckminsterfullerene; Classical and Continuum Physics; Excitation; Excitons; Fullerenes; Indium tin oxide; Indium tin oxides; Observations and Techniques; Pentacene; Photoelectricity; Photoluminescence; Physics; Physics and Astronomy; Research Paper; Room temperature; Semiconductors; Temperature dependence; Transient photovoltage; 光致发光; 接口; 无机半导体; 氧化铟锡; 激子; 瞬态光电压; 苯; 解离
• ISSN: 1674-7348; 1869-1927
• DOI: 10.1007/s11433-011-4336-7

The exciton dissociation at ITO/pentacene interface is studied by means of transient photovoltage measurement.Opposite to ITO/NPB,ITO/CuPc or ITO/C60 interface where polarity change of transient photovoltage is observed,no interfacial dissociation is found at room temperature,which indicates a lack of Frenkel excitons in pentacene.Temperature-dependent photoluminescence （PL） is investigated.More like the behavior of inorganic semiconductors,the integrated PL intensity exhibits monotonic decrease with increasing temperature.A nonradiative path with characteristic activation energy of 8 meV is found to dominate at room temperature.The PL measurement also indicates that like in inorganic semiconductors,other types of excitation,for example,free carriers,could be responsible for the photoelectric processes.