Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes

• Published in: Nano letters 2011-11, Vol.11 (11), p.4642-4646
• Main Authors: Lee, Seoung-Ki, Kim, Beom Joon, Jang, Houk, Yoon, Sung Cheol, Lee, Changjin, Hong, Byung Hee, Rogers, John A, Cho, Jeong Ho, Ahn, Jong-Hyun
• Format: Article
• Language: English
• Subjects: Applied sciences; Biosensors; Channels; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Elastic Modulus; Electrodes; Electronics; Emergence; Equipment Design; Equipment Failure Analysis; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; General equipment and techniques; Graphene; Graphite - chemistry; Instruments, apparatus, components and techniques common to several branches of physics and astronomy; Materials science; Microelectrodes; Molecular electronics, nanoelectronics; Nanostructure; Nanostructures - chemistry; Nanostructures - ultrastructure; Nanotechnology - instrumentation; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing; Specific materials; Transistors; Transistors, Electronic
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl202134z

With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretchable, printable, and transparent transistors composed of monolithically patterned graphene films. This material offers excellent mechanical, electrical, and optical properties, capable of use as semiconducting channels as well as the source/drain electrodes. Such monolithic graphene transistors show hole and electron mobilities of 1188 ± 136 and 422 ± 52 cm2/(V s), respectively, with stable operation at stretching up to 5% even after 1000 or more cycles.