Compact Layout and Bias-Dependent Base-Resistance Modeling for Advanced SiGe HBTs

In this paper, an improved and extended set of physics-based analytical equations for describing the external and internal base resistance of silicon-germanium HBTs as a function of geometry (layout) is presented. The investigated layouts include single- and double-base contacts not only in parallel...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-07, Vol.55 (7), p.1693-1701
Main Authors: Schroter, M., Krause, J., Lehmann, S., Celi, D.
Format: Article
Language:English
Subjects:
Applied sciences
Base resistance
bipolar transistors
Devices
Electronics
Emittance
Exact sciences and technology
Fingers
HICUM
high-frequency circuit design
Links
Mathematical analysis
Mathematical models
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon germanides
Simulation
transistor modeling
Transistors
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Summary:In this paper, an improved and extended set of physics-based analytical equations for describing the external and internal base resistance of silicon-germanium HBTs as a function of geometry (layout) is presented. The investigated layouts include single- and double-base contacts not only in parallel but also perpendicular to the emitter finger. In addition, via and slot base contacts, a large range of link to internal-base-sheet-resistance ratio, and changes in external base layout dimensions are covered. The new equations are verified using quasi-3-D device simulation and are demonstrated to be applicable to all practically useful emitter aspect ratios.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.924440