Device Performance Improvement of PMOS Devices Fabricated by B@@d2@H@@d6@ PIII/PLAD Processing

It has been shown that plasma immersion ion implantation (PIII)/plasma doping (PLAD) processing offers unique advantages over conventional beam-line ion implant systems, including system simplicity, lower cost, higher throughput, [abstract truncated by publisher].

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Bibliographic Details
Published in:IEEE transactions on electron devices 2007-09, Vol.54 (9), p.2497-2502
Main Authors: Qin, Shu, McTeer, A
Format: Article
Language:English
Online Access:Get full text
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Description
Summary:It has been shown that plasma immersion ion implantation (PIII)/plasma doping (PLAD) processing offers unique advantages over conventional beam-line ion implant systems, including system simplicity, lower cost, higher throughput, [abstract truncated by publisher].
ISSN:0018-9383
DOI:10.1109/TED.2007.902423