Auger and photoluminescence analysis of ZnO nanowires grown on AlN thin film

ZnO nanowires were grown on AlN thin film deposited on the glass substrates using a physical vapor deposition method in a conventional tube furnace without introducing any catalysts. The temperature of the substrates was maintained between 500 and 600 °C during the growth process. The typical averag...

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Bibliographic Details
Published in:Applied surface science 2009-05, Vol.255 (15), p.6985-6988
Main Authors: Yousefi, Ramin, Kamaluddin, Burhanuddin, Ghoranneviss, Mahmood, Hajakbari, Fatemeh
Format: Article
Language:English
Subjects:
AlN thin film
Auger spectroscopy
Diffusion
Photoluminescence
ZnO nanowires
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Summary:ZnO nanowires were grown on AlN thin film deposited on the glass substrates using a physical vapor deposition method in a conventional tube furnace without introducing any catalysts. The temperature of the substrates was maintained between 500 and 600 °C during the growth process. The typical average diameters of the obtained nanowires on substrate at 600 and 500 °C were about 57 and 22 nm respectively with several micrometers in length. X-ray diffraction and Auger spectroscopy results showed Al diffused from AlN thin film into the ZnO nanowires for the sample grown at 600 °C. Photoluminescence of the nanowires exhibits appearance of two emission bands, one related to ultraviolet emission with a strong peak at 380–382 nm, and the other related to deep level emission with a weak peak at 503–505 nm. The ultraviolet peak of the nanowires grown at 500 °C was blue shifted by 2 nm compared to those grown at 600 °C. This shift could be attributed to surface effect.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2009.03.025