A 1.4 V Supply CMOS Fractional Bandgap Reference

This paper describes a bandgap reference that outputs a fraction of the silicon bandgap voltage. To simplify the design of an internal operational amplifier, the reference drives the base voltages on substrate transistors through unity-gain buffers to a fraction of a diode drop. With a 1.4 V supply,...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2007-10, Vol.42 (10), p.2180-2186
Main Authors: Perry, R.T., Lewis, S.H., Brokaw, A.P., Viswanathan, T.R.
Format: Article
Language:English
Subjects:
Amplifiers
Analog circuits
Analog integrated circuits
Applied sciences
Buffers
Circuit properties
Circuits
CMOS
CMOS analog integrated circuits
CMOS technology
Design. Technologies. Operation analysis. Testing
Diodes
Dissipation
Electric potential
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Integrated circuits
Land surface temperature
Operational amplifiers
Photonic band gap
reference circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal convertors
Silicon
temperature
Transistors
Voltage
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Description
Summary:This paper describes a bandgap reference that outputs a fraction of the silicon bandgap voltage. To simplify the design of an internal operational amplifier, the reference drives the base voltages on substrate transistors through unity-gain buffers to a fraction of a diode drop. With a 1.4 V supply, the reference produces an output of about 858 mV, which varies by 1.28 mV from -20degC to 100degC. It dissipates 162 muW and occupies 1.2 mm 2 in 0.35 mum CMOS.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2007.905236