Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon

The synthesis of buried silicon nitride insulating layers was carried out by SIMNI (separation by implanted nitrogen) process using implantation of 140 keV nitrogen ( 14N +) ions at fluence of 5.0 × 10 17 cm − 2 at room temperature with current density of 45–46 µA-cm − 2 into single crystal silicon...

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Bibliographic Details
Published in:Surface & coatings technology 2009-06, Vol.203 (17), p.2651-2653
Main Authors: Patel, A.P., Yadav, A.D., Dubey, S.K., Panigrahi, B.K., Nair, K.G.M., Kumar, P., Kanjilal, D., Khan, S.A., Avasthi, D.K.
Format: Article
Language:English
Subjects:
Applied sciences
Buried nitride layer
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
HRXRD
Ion implantation
Irradiation
Materials science
Metals. Metallurgy
Other surface treatments
Physics
Production techniques
Raman
Silicon
SIMNI
Surface treatment
Surface treatments
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Summary:The synthesis of buried silicon nitride insulating layers was carried out by SIMNI (separation by implanted nitrogen) process using implantation of 140 keV nitrogen ( 14N +) ions at fluence of 5.0 × 10 17 cm − 2 at room temperature with current density of 45–46 µA-cm − 2 into single crystal silicon substrates. To study the swift heavy ion (SHI) induced recrystallization of SOI (Silicon-on-insulator) structures, the implanted samples were irradiated with 60 MeV Ni +5 ions with fluence of 1.0 × 10 14 cm − 2  at high temperature (270 °C). The Micro-Raman spectra show distinct peaks assigned to transverse acoustical (TA) and transverse optical (TO) vibration bands of amorphous silicon. The HRXRD studies show that the full width at half maximum (FWHM) of irradiated samples increases with respect to virgin silicon and the samples remain amorphous even after SHI irradiation.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2009.02.086