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Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon
The synthesis of buried silicon nitride insulating layers was carried out by SIMNI (separation by implanted nitrogen) process using implantation of 140 keV nitrogen ( 14N +) ions at fluence of 5.0 × 10 17 cm − 2 at room temperature with current density of 45–46 µA-cm − 2 into single crystal silicon...
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| Published in: | Surface & coatings technology 2009-06, Vol.203 (17), p.2651-2653 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c436t-c1890714372817d361ce1591439b6ea6cc4f36d886282ff053618cea57ee743d3 |
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| cites | cdi_FETCH-LOGICAL-c436t-c1890714372817d361ce1591439b6ea6cc4f36d886282ff053618cea57ee743d3 |
| container_end_page | 2653 |
| container_issue | 17 |
| container_start_page | 2651 |
| container_title | Surface & coatings technology |
| container_volume | 203 |
| creator | Patel, A.P. Yadav, A.D. Dubey, S.K. Panigrahi, B.K. Nair, K.G.M. Kumar, P. Kanjilal, D. Khan, S.A. Avasthi, D.K. |
| description | The synthesis of buried silicon nitride insulating layers was carried out by SIMNI (separation by implanted nitrogen) process using implantation of 140 keV nitrogen (
14N
+) ions at fluence of 5.0
×
10
17 cm
−
2
at room temperature with current density of 45–46 µA-cm
−
2
into single crystal silicon substrates. To study the swift heavy ion (SHI) induced recrystallization of SOI (Silicon-on-insulator) structures, the implanted samples were irradiated with 60 MeV Ni
+5 ions with fluence of 1.0
×
10
14 cm
−
2
at high temperature (270 °C). The Micro-Raman spectra show distinct peaks assigned to transverse acoustical (TA) and transverse optical (TO) vibration bands of amorphous silicon. The HRXRD studies show that the full width at half maximum (FWHM) of irradiated samples increases with respect to virgin silicon and the samples remain amorphous even after SHI irradiation. |
| doi_str_mv | 10.1016/j.surfcoat.2009.02.086 |
| format | article |
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14N
+) ions at fluence of 5.0
×
10
17 cm
−
2
at room temperature with current density of 45–46 µA-cm
−
2
into single crystal silicon substrates. To study the swift heavy ion (SHI) induced recrystallization of SOI (Silicon-on-insulator) structures, the implanted samples were irradiated with 60 MeV Ni
+5 ions with fluence of 1.0
×
10
14 cm
−
2
at high temperature (270 °C). The Micro-Raman spectra show distinct peaks assigned to transverse acoustical (TA) and transverse optical (TO) vibration bands of amorphous silicon. The HRXRD studies show that the full width at half maximum (FWHM) of irradiated samples increases with respect to virgin silicon and the samples remain amorphous even after SHI irradiation.</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/j.surfcoat.2009.02.086</identifier><identifier>CODEN: SCTEEJ</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Buried nitride layer ; Cross-disciplinary physics: materials science; rheology ; Exact sciences and technology ; HRXRD ; Ion implantation ; Irradiation ; Materials science ; Metals. Metallurgy ; Other surface treatments ; Physics ; Production techniques ; Raman ; Silicon ; SIMNI ; Surface treatment ; Surface treatments</subject><ispartof>Surface & coatings technology, 2009-06, Vol.203 (17), p.2651-2653</ispartof><rights>2009 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c436t-c1890714372817d361ce1591439b6ea6cc4f36d886282ff053618cea57ee743d3</citedby><cites>FETCH-LOGICAL-c436t-c1890714372817d361ce1591439b6ea6cc4f36d886282ff053618cea57ee743d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21794774$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Patel, A.P.</creatorcontrib><creatorcontrib>Yadav, A.D.</creatorcontrib><creatorcontrib>Dubey, S.K.</creatorcontrib><creatorcontrib>Panigrahi, B.K.</creatorcontrib><creatorcontrib>Nair, K.G.M.</creatorcontrib><creatorcontrib>Kumar, P.</creatorcontrib><creatorcontrib>Kanjilal, D.</creatorcontrib><creatorcontrib>Khan, S.A.</creatorcontrib><creatorcontrib>Avasthi, D.K.</creatorcontrib><title>Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon</title><title>Surface & coatings technology</title><description>The synthesis of buried silicon nitride insulating layers was carried out by SIMNI (separation by implanted nitrogen) process using implantation of 140 keV nitrogen (
14N
+) ions at fluence of 5.0
×
10
17 cm
−
2
at room temperature with current density of 45–46 µA-cm
−
2
into single crystal silicon substrates. To study the swift heavy ion (SHI) induced recrystallization of SOI (Silicon-on-insulator) structures, the implanted samples were irradiated with 60 MeV Ni
+5 ions with fluence of 1.0
×
10
14 cm
−
2
at high temperature (270 °C). The Micro-Raman spectra show distinct peaks assigned to transverse acoustical (TA) and transverse optical (TO) vibration bands of amorphous silicon. The HRXRD studies show that the full width at half maximum (FWHM) of irradiated samples increases with respect to virgin silicon and the samples remain amorphous even after SHI irradiation.</description><subject>Applied sciences</subject><subject>Buried nitride layer</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Exact sciences and technology</subject><subject>HRXRD</subject><subject>Ion implantation</subject><subject>Irradiation</subject><subject>Materials science</subject><subject>Metals. Metallurgy</subject><subject>Other surface treatments</subject><subject>Physics</subject><subject>Production techniques</subject><subject>Raman</subject><subject>Silicon</subject><subject>SIMNI</subject><subject>Surface treatment</subject><subject>Surface treatments</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkUtr3DAQgEVJoZtt_0LxJU1ysDuSbD1uCSEvSMih7Vmo8qjR4rW2kjch_z7aR3psYGBg-OYhfYR8pdBQoOL7osnr5F20U8MAdAOsASU-kBlVUtect_KAzIB1slZask_kMOcFAFCp2xm5v_Qe3VRFX-Xn4KfqEe3TSxXiWJ38uLk9rUJKtg922lRKjGFK8Q-OWyIsV4MdJ-yrHIbg4viZfPR2yPhln-fk19Xlz4ub-u7h-vbi_K52LRdT7ajSIGnLJVNU9lxQh7TTpaB_C7TCudZz0SslmGLeQ1cI5dB2ElG2vOdzcrybu0rx7xrzZJYhOxzKNRjX2WjggnFgupDf_kvytqVMS_kuyKCTnG0nih3oUsw5oTerFJY2vRgKZiPELMybELMRYoCZIqQ0Hu032Ozs4JMdXcj_utlGiCzPm5OzHYflB58CJpNdwNFhH1JRZfoY3lv1CsdIov4</recordid><startdate>20090615</startdate><enddate>20090615</enddate><creator>Patel, A.P.</creator><creator>Yadav, A.D.</creator><creator>Dubey, S.K.</creator><creator>Panigrahi, B.K.</creator><creator>Nair, K.G.M.</creator><creator>Kumar, P.</creator><creator>Kanjilal, D.</creator><creator>Khan, S.A.</creator><creator>Avasthi, D.K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QO</scope><scope>8FD</scope><scope>FR3</scope><scope>P64</scope><scope>7SR</scope><scope>8BQ</scope><scope>JG9</scope></search><sort><creationdate>20090615</creationdate><title>Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon</title><author>Patel, A.P. ; Yadav, A.D. ; Dubey, S.K. ; Panigrahi, B.K. ; Nair, K.G.M. ; Kumar, P. ; Kanjilal, D. ; Khan, S.A. ; Avasthi, D.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c436t-c1890714372817d361ce1591439b6ea6cc4f36d886282ff053618cea57ee743d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>Buried nitride layer</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>HRXRD</topic><topic>Ion implantation</topic><topic>Irradiation</topic><topic>Materials science</topic><topic>Metals. Metallurgy</topic><topic>Other surface treatments</topic><topic>Physics</topic><topic>Production techniques</topic><topic>Raman</topic><topic>Silicon</topic><topic>SIMNI</topic><topic>Surface treatment</topic><topic>Surface treatments</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Patel, A.P.</creatorcontrib><creatorcontrib>Yadav, A.D.</creatorcontrib><creatorcontrib>Dubey, S.K.</creatorcontrib><creatorcontrib>Panigrahi, B.K.</creatorcontrib><creatorcontrib>Nair, K.G.M.</creatorcontrib><creatorcontrib>Kumar, P.</creatorcontrib><creatorcontrib>Kanjilal, D.</creatorcontrib><creatorcontrib>Khan, S.A.</creatorcontrib><creatorcontrib>Avasthi, D.K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Biotechnology Research Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Biotechnology and BioEngineering Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Materials Research Database</collection><jtitle>Surface & coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Patel, A.P.</au><au>Yadav, A.D.</au><au>Dubey, S.K.</au><au>Panigrahi, B.K.</au><au>Nair, K.G.M.</au><au>Kumar, P.</au><au>Kanjilal, D.</au><au>Khan, S.A.</au><au>Avasthi, D.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon</atitle><jtitle>Surface & coatings technology</jtitle><date>2009-06-15</date><risdate>2009</risdate><volume>203</volume><issue>17</issue><spage>2651</spage><epage>2653</epage><pages>2651-2653</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><coden>SCTEEJ</coden><abstract>The synthesis of buried silicon nitride insulating layers was carried out by SIMNI (separation by implanted nitrogen) process using implantation of 140 keV nitrogen (
14N
+) ions at fluence of 5.0
×
10
17 cm
−
2
at room temperature with current density of 45–46 µA-cm
−
2
into single crystal silicon substrates. To study the swift heavy ion (SHI) induced recrystallization of SOI (Silicon-on-insulator) structures, the implanted samples were irradiated with 60 MeV Ni
+5 ions with fluence of 1.0
×
10
14 cm
−
2
at high temperature (270 °C). The Micro-Raman spectra show distinct peaks assigned to transverse acoustical (TA) and transverse optical (TO) vibration bands of amorphous silicon. The HRXRD studies show that the full width at half maximum (FWHM) of irradiated samples increases with respect to virgin silicon and the samples remain amorphous even after SHI irradiation.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.surfcoat.2009.02.086</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0257-8972 |
| ispartof | Surface & coatings technology, 2009-06, Vol.203 (17), p.2651-2653 |
| issn | 0257-8972 1879-3347 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_903623029 |
| source | ScienceDirect Journals |
| subjects | Applied sciences Buried nitride layer Cross-disciplinary physics: materials science rheology Exact sciences and technology HRXRD Ion implantation Irradiation Materials science Metals. Metallurgy Other surface treatments Physics Production techniques Raman Silicon SIMNI Surface treatment Surface treatments |
| title | Effect of swift heavy ion (SHI) irradiation on nitrogen ion implanted silicon |
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