Customized step coverage of copper seed layer using Eni-PVD (energetic neutral and ion physical vapor deposition)

PVD has usually poor step coverage control for high aspect ratio structures due to its high sticking coefficient and line of sight deposition characteristics. This study presents a novel PVD system, Eni-PVD, reporting customized step coverage with minimal overhang for copper seed layer. Energetic ne...

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Bibliographic Details
Published in:Thin solid films 2009-05, Vol.517 (14), p.3935-3937
Main Authors: Lim, S.T., Park, Y.C., Yoo, S.J., Lee, B.J.
Format: Article
Language:English
Subjects:
Copper seed layer
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Energetic neutral
Exact sciences and technology
Ion
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
PVD
Sputter
Step coverage
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Description
Summary:PVD has usually poor step coverage control for high aspect ratio structures due to its high sticking coefficient and line of sight deposition characteristics. This study presents a novel PVD system, Eni-PVD, reporting customized step coverage with minimal overhang for copper seed layer. Energetic neutrals and ions controlled independently appear to have different angular flux distribution and show customized step coverage with proper mix. The technology can be effective to reduce RC delay through higher aspect ratio interconnect. It is capable of the Cu seed layer and barrier sputter deposition for 45 nm and beyond based on its critical minimum sidewall barrier/cladding thickness assessment. It can also be applied to other PVD areas where fine topography control is required.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2009.01.163