Investigation on the Initial Hot-Carrier Injection in P-LDMOS Transistors With Shallow Trench Isolation Structure

In this paper, early-stage hot-electron generation is shown to inject electrons into the shallow trench isolation (STI) edge above the drift region that causes the linear-region drain current to increase abruptly in the first moment of the stress for P-LDMOS transistors. After this early-stage carri...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-12, Vol.55 (12), p.3569-3574
Main Authors: Ru-Yi Su, Chiang, P.Y., Jeng Gong, Tsung Yi Huang, Chun-Lin Tsai, Chou, C.C., Liu, C.M.
Format: Article
Language:English
Subjects:
Applied sciences
Devices
Doping
Drains
Drift
Electronics
Exact sciences and technology
Hot carrier injection
Hot-electron generation
Impact ionization
initial degradation mechanism
MOSFETs
P-LDMOS transistors
Reliability
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stresses
Transistors
Trenches
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Summary:In this paper, early-stage hot-electron generation is shown to inject electrons into the shallow trench isolation (STI) edge above the drift region that causes the linear-region drain current to increase abruptly in the first moment of the stress for P-LDMOS transistors. After this early-stage carrier trapping, the transistor exhibits normal hot-carrier degradation during the following stress period. To further study this phenomenon, the geometry and the doping profile of the drift region near the STI edge and the polysilicon gate doping area are changed to investigate the initial I DLIN increase. Two-dimensional device simulator is used to analyze the experimental results. It is proven that the amount of current increase strongly depends on the distance from the maximum impact ionization generation rate point to the STI.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2006922