Subthreshold Performance of Dual-Material Gate CMOS Devices and Circuits for Ultralow Power Analog/Mixed-Signal Applications

Analog circuits based on the subthreshold operation of CMOS devices are very attractive for ultralow power, high gain, and moderate frequency applications. In this paper, the analog performance of 100 nm dual-material gate (DMG) CMOS devices in the subthreshold regime of operation is reported for th...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-03, Vol.55 (3), p.827-832
Main Authors: Chakraborty, S., Mallik, A., Sarkar, C.K.
Format: Article
Language:English
Subjects:
Amplifiers
Analog circuits
Applied sciences
Circuit properties
CMOS
CMOS integrated circuits
Compound structure devices
Design. Technologies. Operation analysis. Testing
Devices
dual-material gate (DMG)
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Gates
High gain
Integrated circuits
Logic gates
Materials
Metals
mixed signal
Performance evaluation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
subthreshold
Transconductance
ultralow power
Voltage
Voltage gain
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Summary:Analog circuits based on the subthreshold operation of CMOS devices are very attractive for ultralow power, high gain, and moderate frequency applications. In this paper, the analog performance of 100 nm dual-material gate (DMG) CMOS devices in the subthreshold regime of operation is reported for the first time. The analog performance parameters, namely drain-current (I d ), transconductance (g m ), transconductance generation factor (g m /I d ), early voltage (V A ), output resistance (R o ) and intrinsic gain for the DMG n-MOS devices, and and for the DMG p-MOS devices are systematically investigated with the help of extensive device simulations. The effects of different capacitances on the unity-gain frequency are also studied. The DMG CMOS devices are found to have significantly better performance as compared to their single-material gate (SMG) counterpart. More than 70% improvement in the voltage gain is observed for the CMOS amplifiers when dual-material gates, instead of single-material gates, are used in both the n- and p-channel devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2007.914842