Preparation and characterization of pentacene-based organic thin-film transistors with PVA passivation layers

• Published in: Thin solid films 2009-07, Vol.517 (17), p.5318-5321
• Main Authors: Wu, G.M., Lu, Y.H., Teng, J.W., Wang, J.C., Nee, T.E.
• Format: Article
• Language: English
• Subjects: Applied sciences; Electronics; Exact sciences and technology; Organic thin-film transistor; Passivation; Pentacene; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2009.03.187

High-mobility organic thin-film transistors (OTFT) were fabricated with pentacene active layers and passivated by polyvinyl acetate (PVA) in this study. The organic pentacene film showed a single phase structure with the interplanar spacing of 1.54 nm corresponding to the (001) diffraction. The initial field effect mobility of OTFT was 4.4 × 10 − 2  cm 2/Vs without the passivation. After the PVA passivation, the device exhibited an improved field-effect mobility of 1.0 × 10 − 1  cm 2/Vs. It was decreased to 8.0 × 10 − 2  cm 2/Vs after 35 days. The on/off current ratio has been at the order of 10 6. The device durability was also examined by 80° bending cycle tests in tension. The transistors exhibited lower on/off ratio and higher turn-on voltage after 2500 bending cycles. The lifetime of the passivated OTFT was improved to more than 2 months in air. It has been suggested that the PVA passivation layer could effectively protect the pentacene-based OTFT from moisture and oxygen permeation.