A zinc-oxide thin-film transistor using a spun-on dielectric and gate electrode

This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PS...

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Bibliographic Details
Published in:Journal of physics. D, Applied physics Applied physics, 2009-03, Vol.42 (6), p.065105-065105 (6)
Main Authors: Kwon, Jae-Hong, Seo, Jung-Hoon, Shin, Sang-Il, Ju, Byeong-Kwon
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:This paper presents an organic-inorganic hybrid transparent thin-film transistor (TTFT) with an active channel of zinc-oxide (ZnO). The solution-processed stagger type device consists of methyl-siloxane-based spin-on glass (SOG) and poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) for the dielectric and gate electrode, respectively. The TTFT, fabricated by this method, has an optical transmittance of 67.4%, and it displays a field effect mobility of 20.65 cm@u2 V@@u-1@ s@@u-1@, an on/off ratio of > 10@u4, a threshold voltage of 6.9 V and a subthreshold swing of 1.02 V/decade when the drain voltage (V@@dDS@) is 20 V.
ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/42/6/065105