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Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for [Formula Omitted] and Subthreshold Slope
An analytical approach for modeling the electrostatic potential in nanoscale undoped FinFETs is derived. This method uses a 2-D solution for this potential within a double-gate FET and takes into account the top gate electrode as the third dimension by applying the conformal mapping technique. Herew...
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Published in: | IEEE transactions on electron devices 2007-12, Vol.55 (12), p.3467-3475 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
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Summary: | An analytical approach for modeling the electrostatic potential in nanoscale undoped FinFETs is derived. This method uses a 2-D solution for this potential within a double-gate FET and takes into account the top gate electrode as the third dimension by applying the conformal mapping technique. Herewith, an analytical closed-form model for the height of the potential barrier below threshold is defined which includes 3-D effects. From that, models for subthreshold slope and threshold voltage of nanoscale triple-gate FETs are derived. The results are in good agreement with numerical device simulation results and measurements for channel lengths down to 20 nm. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2008.2006535 |