Loading…

Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for [Formula Omitted] and Subthreshold Slope

An analytical approach for modeling the electrostatic potential in nanoscale undoped FinFETs is derived. This method uses a 2-D solution for this potential within a double-gate FET and takes into account the top gate electrode as the third dimension by applying the conformal mapping technique. Herew...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2007-12, Vol.55 (12), p.3467-3475
Main Authors: Kloes, A, Weidemann, M, Goebel, D, Bosworth, B T
Format: Article
Language:English
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An analytical approach for modeling the electrostatic potential in nanoscale undoped FinFETs is derived. This method uses a 2-D solution for this potential within a double-gate FET and takes into account the top gate electrode as the third dimension by applying the conformal mapping technique. Herewith, an analytical closed-form model for the height of the potential barrier below threshold is defined which includes 3-D effects. From that, models for subthreshold slope and threshold voltage of nanoscale triple-gate FETs are derived. The results are in good agreement with numerical device simulation results and measurements for channel lengths down to 20 nm.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.2006535