Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for [Formula Omitted] and Subthreshold Slope

An analytical approach for modeling the electrostatic potential in nanoscale undoped FinFETs is derived. This method uses a 2-D solution for this potential within a double-gate FET and takes into account the top gate electrode as the third dimension by applying the conformal mapping technique. Herew...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2007-12, Vol.55 (12), p.3467-3475
Main Authors: Kloes, A, Weidemann, M, Goebel, D, Bosworth, B T
Format: Article
Language:English
Subjects:
Devices
Exact solutions
Mathematical analysis
Mathematical models
Nanocomposites
Nanomaterials
Nanostructure
Potential barriers
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 3475
container_issue 12
container_start_page 3467
container_title IEEE transactions on electron devices
container_volume 55
creator Kloes, A
Weidemann, M
Goebel, D
Bosworth, B T
description An analytical approach for modeling the electrostatic potential in nanoscale undoped FinFETs is derived. This method uses a 2-D solution for this potential within a double-gate FET and takes into account the top gate electrode as the third dimension by applying the conformal mapping technique. Herewith, an analytical closed-form model for the height of the potential barrier below threshold is defined which includes 3-D effects. From that, models for subthreshold slope and threshold voltage of nanoscale triple-gate FETs are derived. The results are in good agreement with numerical device simulation results and measurements for channel lengths down to 20 nm.
doi_str_mv 10.1109/TED.2008.2006535
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_903647043</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>903647043</sourcerecordid><originalsourceid>FETCH-LOGICAL-p1223-fca9f93973917947bff8fc4967f248c04322a186f78568dcc576b5a3f1bd7fee3</originalsourceid><addsrcrecordid>eNqFkDtPAzEMgCMEEuWxM0YMMF1JLu8RSgtIoCIoE0IovUsgKE3aS27gt_BnSYGJARZblj9_tgzAAUZDjJE6mY3PhzVCch04I2wDDDBjolKc8k0wQAjLShFJtsFOSm-l5JTWA_Axe-2Mqc7dwoTkYtAejnxMpq0msVvAm9gaD23s4G3MJmRX-me665zpoAvwIbRxaVo4cWEyniV4Z1Lvswsv6-Zpkb1n15SR8arXudjTl-pxre69htOFy9m0T1CHFt7381xuSa_Rl8IX7x7Ystons_-Td8FD2TK6rK6nF1ej0-tqieuaVLbRyiqiBFFYKCrm1krbUMWFralsECV1rbHkVkjGZds0TPA508TieSusMWQXHH97l11c9Sbl54VLjfFeBxP79KwQ4VQUz7-kFAwxRbAo5NGfJKFUMCzX4OEv8C32XXldsfGaMoIkI5-FR5Sg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>862453085</pqid></control><display><type>article</type><title>Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for [Formula Omitted] and Subthreshold Slope</title><source>IEEE Xplore (Online service)</source><creator>Kloes, A ; Weidemann, M ; Goebel, D ; Bosworth, B T</creator><creatorcontrib>Kloes, A ; Weidemann, M ; Goebel, D ; Bosworth, B T</creatorcontrib><description>An analytical approach for modeling the electrostatic potential in nanoscale undoped FinFETs is derived. This method uses a 2-D solution for this potential within a double-gate FET and takes into account the top gate electrode as the third dimension by applying the conformal mapping technique. Herewith, an analytical closed-form model for the height of the potential barrier below threshold is defined which includes 3-D effects. From that, models for subthreshold slope and threshold voltage of nanoscale triple-gate FETs are derived. The results are in good agreement with numerical device simulation results and measurements for channel lengths down to 20 nm.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2008.2006535</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><subject>Devices ; Exact solutions ; Mathematical analysis ; Mathematical models ; Nanocomposites ; Nanomaterials ; Nanostructure ; Potential barriers</subject><ispartof>IEEE transactions on electron devices, 2007-12, Vol.55 (12), p.3467-3475</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2008</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kloes, A</creatorcontrib><creatorcontrib>Weidemann, M</creatorcontrib><creatorcontrib>Goebel, D</creatorcontrib><creatorcontrib>Bosworth, B T</creatorcontrib><title>Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for [Formula Omitted] and Subthreshold Slope</title><title>IEEE transactions on electron devices</title><description>An analytical approach for modeling the electrostatic potential in nanoscale undoped FinFETs is derived. This method uses a 2-D solution for this potential within a double-gate FET and takes into account the top gate electrode as the third dimension by applying the conformal mapping technique. Herewith, an analytical closed-form model for the height of the potential barrier below threshold is defined which includes 3-D effects. From that, models for subthreshold slope and threshold voltage of nanoscale triple-gate FETs are derived. The results are in good agreement with numerical device simulation results and measurements for channel lengths down to 20 nm.</description><subject>Devices</subject><subject>Exact solutions</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Potential barriers</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkDtPAzEMgCMEEuWxM0YMMF1JLu8RSgtIoCIoE0IovUsgKE3aS27gt_BnSYGJARZblj9_tgzAAUZDjJE6mY3PhzVCch04I2wDDDBjolKc8k0wQAjLShFJtsFOSm-l5JTWA_Axe-2Mqc7dwoTkYtAejnxMpq0msVvAm9gaD23s4G3MJmRX-me665zpoAvwIbRxaVo4cWEyniV4Z1Lvswsv6-Zpkb1n15SR8arXudjTl-pxre69htOFy9m0T1CHFt7381xuSa_Rl8IX7x7Ystons_-Td8FD2TK6rK6nF1ej0-tqieuaVLbRyiqiBFFYKCrm1krbUMWFralsECV1rbHkVkjGZds0TPA508TieSusMWQXHH97l11c9Sbl54VLjfFeBxP79KwQ4VQUz7-kFAwxRbAo5NGfJKFUMCzX4OEv8C32XXldsfGaMoIkI5-FR5Sg</recordid><startdate>20071201</startdate><enddate>20071201</enddate><creator>Kloes, A</creator><creator>Weidemann, M</creator><creator>Goebel, D</creator><creator>Bosworth, B T</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20071201</creationdate><title>Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for [Formula Omitted] and Subthreshold Slope</title><author>Kloes, A ; Weidemann, M ; Goebel, D ; Bosworth, B T</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p1223-fca9f93973917947bff8fc4967f248c04322a186f78568dcc576b5a3f1bd7fee3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Devices</topic><topic>Exact solutions</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Potential barriers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kloes, A</creatorcontrib><creatorcontrib>Weidemann, M</creatorcontrib><creatorcontrib>Goebel, D</creatorcontrib><creatorcontrib>Bosworth, B T</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kloes, A</au><au>Weidemann, M</au><au>Goebel, D</au><au>Bosworth, B T</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for [Formula Omitted] and Subthreshold Slope</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>2007-12-01</date><risdate>2007</risdate><volume>55</volume><issue>12</issue><spage>3467</spage><epage>3475</epage><pages>3467-3475</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><abstract>An analytical approach for modeling the electrostatic potential in nanoscale undoped FinFETs is derived. This method uses a 2-D solution for this potential within a double-gate FET and takes into account the top gate electrode as the third dimension by applying the conformal mapping technique. Herewith, an analytical closed-form model for the height of the potential barrier below threshold is defined which includes 3-D effects. From that, models for subthreshold slope and threshold voltage of nanoscale triple-gate FETs are derived. The results are in good agreement with numerical device simulation results and measurements for channel lengths down to 20 nm.</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/TED.2008.2006535</doi><tpages>9</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0018-9383
ispartof IEEE transactions on electron devices, 2007-12, Vol.55 (12), p.3467-3475
issn 0018-9383
1557-9646
language eng
recordid cdi_proquest_miscellaneous_903647043
source IEEE Xplore (Online service)
subjects Devices
Exact solutions
Mathematical analysis
Mathematical models
Nanocomposites
Nanomaterials
Nanostructure
Potential barriers
title Three-Dimensional Closed-Form Model for Potential Barrier in Undoped FinFETs Resulting in Analytical Equations for [Formula Omitted] and Subthreshold Slope
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T14%3A53%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Three-Dimensional%20Closed-Form%20Model%20for%20Potential%20Barrier%20in%20Undoped%20FinFETs%20Resulting%20in%20Analytical%20Equations%20for%20%5BFormula%20Omitted%5D%20and%20Subthreshold%20Slope&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Kloes,%20A&rft.date=2007-12-01&rft.volume=55&rft.issue=12&rft.spage=3467&rft.epage=3475&rft.pages=3467-3475&rft.issn=0018-9383&rft.eissn=1557-9646&rft_id=info:doi/10.1109/TED.2008.2006535&rft_dat=%3Cproquest%3E903647043%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p1223-fca9f93973917947bff8fc4967f248c04322a186f78568dcc576b5a3f1bd7fee3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=862453085&rft_id=info:pmid/&rfr_iscdi=true