Avalanche Breakdown Due to 3-D Effects in the Impact-Ionization MOS (I-MOS) on SOI: Reliability Issues

In this paper, we report on reliability issues concerning the impact-ionization MOS (I-MOS). For the first time, the anomalously high off current in the planar I-MOS is studied owing to light-emission experiments. We show that a first breakdown occurs at the width borders of the device, followed by...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2008-06, Vol.55 (6), p.1373-1378
Main Authors: Mayer, F., Le Royer, C., Blachier, D., Clavelier, L., Deleonibus, S.
Format: Article
Language:English
Subjects:
Applied sciences
Borders
Breakdown
Compound structure devices
Devices
Diodes
Electric charge
Electrical measurement
Electronics
Exact sciences and technology
Impact ionization
impact-ionization MOS (I-MOS)
influence of geometrical parameters
Metal oxide semiconductors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon-on-insulator (SOI)
Simulation
subthreshold slope
Three dimensional
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Summary:In this paper, we report on reliability issues concerning the impact-ionization MOS (I-MOS). For the first time, the anomalously high off current in the planar I-MOS is studied owing to light-emission experiments. We show that a first breakdown occurs at the width borders of the device, followed by the theoretical volume breakdown. This result is intensively studied through 3D TCAD simulations. The results are correlated with electrical measurements. We finally propose and validate a degradation mechanism based on charge trapping.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.922797