UV-SLPT for Gas Sensor Research on MISiC Devices

A modified Scanning Light Pulse Technique (SLPT) setup that can be used to evaluate SiC-based gas-sensitive field-effect devices is introduced. This is exemplified with measurements on a Pt-MISiC capacitor that has a metal thickness gradient. The device shows large responses to hydrogen and ammonia...

Full description

Saved in:
Bibliographic Details
Published in:IEEE sensors journal 2007-04, Vol.7 (4), p.592-599
Main Authors: Klingvall, R., Eriksson, M., Lundstrom, I.
Format: Article
Language:English
Subjects:
Ammonia
Capacitors
Cutting
Devices
Film thickness
Gas detectors
gas sensors
Gases
Hydrogen
Mechanical variables measurement
MISiC
Optical films
Optical sensors
Platinum
Scanning
scanning light pulse technique
silicon carbide
SLPT
TECHNOLOGY
TEKNIKVETENSKAP
Temperature dependence
Thickness measurement
UV-SLPT
Wavelength measurement
Wavelengths
wide band gap semiconductor
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A modified Scanning Light Pulse Technique (SLPT) setup that can be used to evaluate SiC-based gas-sensitive field-effect devices is introduced. This is exemplified with measurements on a Pt-MISiC capacitor that has a metal thickness gradient. The device shows large responses to hydrogen and ammonia in air. The H 2 and NH 3 responses show a complementary dependence on the Pt film thickness at 140degC. The temperature dependence differs however for the two gases. The measurement setup uses UV transparent optics together with mechanical chopping of light from a short wavelength light source. The spatial resolution of the system is found to be approximately 50 mum
ISSN:1530-437X
1558-1748
1558-1748
DOI:10.1109/JSEN.2007.891954