Experimental Analysis of Punch-Through Conditions in Power P- I- N Diodes

Commercial power diodes are optimized to feature punch-through behavior. However, a tradeoff between the width and the doping level of the diode epitaxial layer leads to various levels of optimization. For a given breakdown voltage, a shorter epitaxial layer width leads to better transient performan...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2007-01, Vol.22 (1), p.13-20
Main Authors: Salah, T.B., Buttay, C., Allard, B., Morel, H., Ghedira, S., Besbes, K.
Format: Article
Language:English
Subjects:
Applied sciences
Avalanche
Breakdown
Breakdown voltage
Design of experiments
Devices
Diodes
Doping profiles
Electric potential
Electric power
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Engineering Sciences
Epitaxial layers
Exact sciences and technology
Instruments
intrinsic
Ionization
n -type ( P - I - N ) diode
Optimization
Other
Other multijunction devices. Power transistors. Thyristors
p -type
Power electronics
Power electronics, power supplies
Power system modeling
punch-through (PT)
reverse-recovery
Semiconductor diodes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Simulation
Testing
Voltage
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Description
Summary:Commercial power diodes are optimized to feature punch-through behavior. However, a tradeoff between the width and the doping level of the diode epitaxial layer leads to various levels of optimization. For a given breakdown voltage, a shorter epitaxial layer width leads to better transient performances. Device datasheets do not cover this issue and a simple experimental setup is presented to assess the optimization conditions inside the diode epitaxial layer. Three commercial devices are tested and experimental results are confronted to device simulations. A good agreement is found
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2006.886648